MRAMS
MRAM (Magneto-resistive RAM), is a type of Non-Volatile Memory Technology that uses magnetic domains to store information. MRAM has the potential to become a universal memory.
Over the years different variations of MRAM memory devices have emerged, trading off writing speed, reliability, power, and area consumption. Based on their specific characteristics, they target different applications. For example, STT-MRAM for embedded Flash and last-level cache, SOT-MRAM for lower-level cache memories, VCMA-MRAM for ultralow-power applications, and the promise of VG-SOT MRAM as the ultimate unified cache memory.
In the mainstream currently, STT-MRAM (Spin Transfer Torque), requires much less write current than the conventional or Toggle MRAM. It offers High Speed, Low Latency, High Endurance, One one-byte access in addition to storing like ROM/FLASH with a non-volatile long Retention Time.
The addition of a Magnetic Tunnel Junction (MJT) layer in STT-MRAM enables smaller cell size, small write power consumption, and no disturbance to adjacent cell’s magnetic moment during write, compared to older MRAM technologies. It is also more scalable to lower geometry nodes.
STT-MRAM is one of the best- memory solutions for Code Storage, Working Memory, Data Logging, and Backup Memory. It can replace FRAM, psRAM, SRAM, nvSRAM, and NOR FLASH and does not need a capacitor or battery.
Applications be found in Industrial, Embedded, Enterprise Data Storage; Medical Devices, IoT, Mission Critical Systems; Automotive; Avionics and space, and many others.
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MRAMS Authorized Suppliers
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Products from our Channel Procurement Suppliers lineup are part of ARCOTEK’s Procurement Services. All products are sourced either directly from the original manufacturer or through their authorized channels, with full traceable to the original manufacturer, unless otherwise specified. All Product supplied carries a 1-year warranty for form, fit, and function as per the Manufacturer’s specifications.