MRAM - PPI

General Description

The device is a Spin-Transfer-Torque Magneto-resistive Random Access Memory (STT-MRAM). Data is always non-volatile, and the device can replace FRAM, low-power SRAM or nvSRAM with same functionality and help to simplify system design. Due to the non-volatility and virtually unlimited endurance characteristics of STT-MRAM, it is suited for code storage, data logging, backup memory and working memory in industrial designs.

Features

• Interface - Parallel Asynchronous and Page Mode Interface

• Page Mode Read Access - Interpage read access: 70ns - Intrapage read access: 15ns

• Page Mode Write Access - Interpage write access: 320ns - Intrapage write access: 15ns

• Page Size - X16 I/O Mode: 4-word page size - X8 I/O Mode: 8-word page size

• Low Power Consumption

• Data Byte Control (x16 I/O Mode)

• Memory cell: STT-MRAM - nonvolatile

• Density - 16Mb, 8Mb, 4Mb, 2Mb and 1Mb

• Data Integrity: No external ECC required

• Data Endurance - Unlimited read cycle - 1014 write cycle

• Data Retention - 10 years at 85°C • Single Power Supply Operation

• Operating Temperature Rang - Industrial Temperature: -40°C to 85°C

• RoHS compliant package - 44 TSOP2-400mil - 48 TFBGA-6x8mm - 54 TSOP2-400mil