STT (iMTJ) - Parallel
NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM.
They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility.
Key Features
- 1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb Density
- Power Supply : 1.8V (1.71V ~ 1.98V)or 3.3V (2.7V ~ 3.6V)
- Parallel asynchronous interface x16/x8 I/O
- page read/write function for high performance
- Data Retention : 10 years
- Read Endurance : unlimited
- Write Endurance : 1014
- No external ECC required
- Package Type : 48FBGA, 44TSOP2, 54TSOP2
Product List
Density |
Part Number |
Organization |
VDD(V) |
Access Time(ns) |
Temperature |
Package |
Status |
Data Sheet |
4M bit |
S3R4016V1M |
256Kx16 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
|
S3R4008V1M |
512Kx8 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
4M bit |
S3R4016R1M |
256Kx16 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
|
S3R4008R1M |
512Kx8 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
8M bit |
S3R8016V1M |
512Kx16 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
|
S3R8008V1M |
1Mx8 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
8M bit |
S3R8016R1M |
512Kx16 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
|
S3R8008R1M |
1Mx8 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
16M bit |
S3R1616V1M |
1Mx16 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
|
S3R1608V1M |
2Mx8 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
16M bit |
S3R1616R1M |
1Mx16 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
|
S3R1608R1M |
2Mx8 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
44TSOP2, 48FBGA |
Mass Prod. |
||
32M bit |
S3R3216V1M |
2Mx16 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
|
S3R3216R1M |
2Mx16 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
48FBGA, 54TSOP2 |
Mass Prod. |
||
64M bit |
S3R6416V1M |
4Mx16 |
2.70~3.60 |
70ns |
-40℃ to 85℃ |
48FBGA |
ES |
|
S3R6416R1M |
4Mx16 |
1.71~1.98 |
70ns |
-40℃ to 85℃ |
48FBGA |
ES |
* ES : Engineer Sample, UD : Under Development
* If you require 1Mb or 2Mb density, please make a separate request.
S3Rxxxxx1M_Application_Note_rev1.1