STT (iMTJ) - Parallel

NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM.  

They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility.  

Key Features

  • 1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb Density 

  • Power Supply : 1.8V (1.71V ~ 1.98V)or 3.3V (2.7V ~ 3.6V) 

  • Parallel asynchronous interface x16/x8 I/O 

  • page read/write function for high performance 

  • Data Retention : 10 years 

  • Read Endurance : unlimited 

  • Write Endurance : 1014 

  • No external ECC required 

  • Package Type : 48FBGA, 44TSOP2, 54TSOP2 

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