STT (iMTJ) - Parallel
NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM.
They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility.
Key Features
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1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb Density
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Power Supply : 1.8V (1.71V ~ 1.98V)or 3.3V (2.7V ~ 3.6V)
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Parallel asynchronous interface x16/x8 I/O
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page read/write function for high performance
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Data Retention : 10 years
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Read Endurance : unlimited
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Write Endurance : 1014
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No external ECC required
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Package Type : 48FBGA, 44TSOP2, 54TSOP2